Samsung Semiconductor, Inc. SSI1N50A | 搜芯易Sourcengine

Samsung Semiconductor, Inc. SSI1N50A

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 1.5A I(D), 500V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
500 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
113 mJ
Drain-source On Resistance-Max
5.5 ohm
Pulsed Drain Current-Max (IDM)
5 A