Samsung Semiconductor, Inc. SSH10N70 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. SSH10N70

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 10A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
150
Drain Current-Max (ID) (A)
10
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
410
DS Breakdown Voltage-Min (V)
700
Turn-off Time-Max (toff) (ns)
840
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
150
Avalanche Energy Rating (Eas) (mJ)
795
Pulsed Drain Current-Max (IDM) (A)
40
Drain-source On Resistance-Max (ohm)
1.2