Solid State Devices, Inc. SSG55N60Z | 搜芯易Sourcengine

Solid State Devices, Inc. SSG55N60Z

生命周期状态
Active
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-254
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
S-XSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-254
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
195
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
58
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
350
Collector Current-Max (IC) (A)
55
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600