Solid State Devices, Inc. SSG55N60/3 | 搜芯易Sourcengine

Solid State Devices, Inc. SSG55N60/3

生命周期状态
Active
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
195
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
55
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600