SeCoS Corporation SSG4435J-C | 搜芯易Sourcengine

SeCoS Corporation SSG4435J-C

生命周期状态
Active
说明
Power Field-Effect Transistor, 7.3A I(D), 30V, 0.024ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
1.4
Drain Current-Max (ID) (A)
7.3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
145
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
1.4
Avalanche Energy Rating (Eas) (mJ)
20
Pulsed Drain Current-Max (IDM) (A)
27
Drain-source On Resistance-Max (ohm)
0.024