Solid State Devices, Inc. SSG200EF60ETX | 搜芯易Sourcengine

Solid State Devices, Inc. SSG200EF60ETX

生命周期状态
Active
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
GENERAL PURPOSE SWITCHING
JESD-30 Code
R-CBCC-N4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
BOTTOM
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
290
Turn-off Time-Nom (toff) (ns)
900
Collector Current-Max (IC) (A)
200
Collector-emitter Voltage-Max (V)
600