GOOD-ARK ELECTRONICS CO LTD SSF2116EJ3 | 搜芯易Sourcengine

GOOD-ARK ELECTRONICS CO LTD SSF2116EJ3

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 8.5A I(D), 20V, 0.0173ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F6
Configuration
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
8.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Pulsed Drain Current-Max (IDM) (A)
34
Drain-source On Resistance-Max (ohm)
0.0173