SeCoS Corporation SSD25N10-C | 搜芯易Sourcengine

SeCoS Corporation SSD25N10-C

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 25A I(D), 100V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
25
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Avalanche Energy Rating (Eas) (mJ)
26.6
Pulsed Drain Current-Max (IDM) (A)
45
Drain-source On Resistance-Max (ohm)
0.048