SS646SO164834MJ1
Smart Modular Technologies, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明DDR1 DRAM Module, 64MX64, 0.7ns, CMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width3.8 mm
- Length67.6 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeSINGLE BANK PAGE BURST
- JESD-30 CodeR-XDMA-N200
- Memory Width64
- Organization64MX64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density4294967296 bit
- Memory IC TypeDDR1 DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.6 mm
- Access Time-Max0.7 ns
- Number of Ports1
- Number of Words67108864 words
- Seated Height-Max31.9 mm
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH; WD-MAX
- Supply Current-Max680 mA
- Number of Functions1
- Number of Terminals200
- Standby Current-Max0.32 Amp
- Number of Words Code64M
- Package Body MaterialUNSPECIFIED
- Sequential Burst Length2,4,8
- Interleaved Burst Length2,4,8
- Package Equivalence CodeDIMM200,24
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.5 V
- Supply Voltage-Nom (Vsup)2.6 V
- Clock Frequency-Max (fCLK)200 MHz
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SS646SO164834MJ1