Vishay Intertechnology, Inc. SQP120N06-06 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SQP120N06-06

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 119A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
119
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
45
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
420
Turn-off Time-Max (toff) (ns)
65
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
211
Pulsed Drain Current-Max (IDM) (A)
480
Drain-source On Resistance-Max (ohm)
0.006