Vishay Intertechnology, Inc. SQM25N15-52_GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SQM25N15-52_GE3

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-CH 150V 25A TO263
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
25
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
150
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
45
Pulsed Drain Current-Max (IDM) (A)
65
Drain-source On Resistance-Max (ohm)
0.052
Time@Peak Reflow Temperature-Max (s)
40