SQM110P04-04L-GE3
Vishay Intertechnology, Inc.
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明MOSFET P-CH 40V 120A TO263
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)375
- Drain Current-Max (ID) (A)120
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)40
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)175
- Avalanche Energy Rating (Eas) (mJ)320
- Pulsed Drain Current-Max (IDM) (A)240
- Drain-source On Resistance-Max (ohm)0.0038
- Time@Peak Reflow Temperature-Max (s)40
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SQM110P04-04L-GE3