Vishay Intertechnology, Inc. SQJ968EP | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SQJ968EP

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 23.5A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
2
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
23.5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
25.5
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
48
Turn-off Time-Max (toff) (ns)
39
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
4
Pulsed Drain Current-Max (IDM) (A)
72
Drain-source On Resistance-Max (ohm)
0.0336
Screening Level / Reference Standard
AEC-Q101