Vishay Intertechnology, Inc. SQJ952EP-T1_GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SQJ952EP-T1_GE3

生命周期状态
Active
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 60V 23A 5-Pin(4+Tab) PowerPAK SO T/R Automotive AEC-Q101
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
2 N-Channel (Dual)
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
2
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
23
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
20
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
66
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
42
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
22
Pulsed Drain Current-Max (IDM) (A)
93
Drain-source On Resistance-Max (ohm)
0.024
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED