Vishay Intertechnology, Inc. SQJ488EP-T1_BE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SQJ488EP-T1_BE3

生命周期状态
NRFND
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 100V 42A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
42
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
22
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
55
Turn-off Time-Max (toff) (ns)
37
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
1.68
Pulsed Drain Current-Max (IDM) (A)
170
Drain-source On Resistance-Max (ohm)
0.021