Vishay Intertechnology, Inc. SQJ479EP | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SQJ479EP

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 32A I(D), 80V, 0.033ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID) (A)
32
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
35
DS Breakdown Voltage-Min (V)
80
Feedback Cap-Max (Crss) (pF)
300
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
90
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
80
Pulsed Drain Current-Max (IDM) (A)
100
Drain-source On Resistance-Max (ohm)
0.033
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
40