MSI ELECTRONICS INC SQ5470B | 搜芯易Sourcengine

MSI ELECTRONICS INC SQ5470B

生命周期状态
Discontinued
说明
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
O-LALF-W2
Configuration
SINGLE
Package Shape
ROUND
Package Style
LONG FORM Meter
Surface Mount
NO
Terminal Form
WIRE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Case Connection
ISOLATED
Terminal Position
AXIAL
Additional Feature
LOW LEAKAGE, HIGH Q
Number of Elements
1
Quality Factor-Min
500
Diode Cap Tolerance
5 %
Number of Terminals
2
Reverse Current-Max
0.004 uA
Qualification Status
Not Qualified
Reverse Test Voltage
30 V
Breakdown Voltage-Min
30 V
Diode Capacitance-Nom
33 pF
Package Body Material
GLASS
Power Dissipation-Max
0.4 W
Diode Element Material
SILICON
Operating Temperature-Max
175 Cel
Rep Pk Reverse Voltage-Max
30 V
Diode Capacitance Ratio-Min
2.9
Variable Capacitance Diode Classification
ABRUPT