Vishay Intertechnology, Inc. SQ4940AEY-T1_GE3 | 搜芯易Sourcengine

Vishay Intertechnology, Inc. SQ4940AEY-T1_GE3

生命周期状态
Active
RoHS
符合RoHS标准
说明
MOSFET dual n-channel 40-v (d-s) 175c mosfe
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
2 N-Channel (Dual)
JEDEC-95 Code
MS-012AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
8
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
32
DS Breakdown Voltage-Min (V)
40
Feedback Cap-Max (Crss) (pF)
55
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
44
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
15
Pulsed Drain Current-Max (IDM) (A)
32
Drain-source On Resistance-Max (ohm)
0.024
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED