SPW17N80C2
INFINEON TECHNOLOGIES AG
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)17 A
- DS Breakdown Voltage-Min800 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)208 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)670 mJ
- Drain-source On Resistance-Max0.29 ohm
- Pulsed Drain Current-Max (IDM)51 A
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SPW17N80C2