Solid State Devices, Inc. SPT6234JRUBTX | 搜芯易Sourcengine

Solid State Devices, Inc. SPT6234JRUBTX

生命周期状态
Active
REACH
REACH compliant
说明
Power Bipolar Transistor, 5A I(C), 275V V(BR)CEO, 1-Element, NPN, Silicon, TO-257
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-257
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
VCEsat-Max (V)
2.5
Terminal Position
SINGLE
Fall Time-Max (ns)
800
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Rise Time-Max (tr) (ns)
750
DC Current Gain-Min (hFE)
9
Power Dissipation-Max (W)
33
Transistor Element Material
SILICON
Turn-off Time-Max (toff) (ns)
5800
Collector Current-Max (IC) (A)
5
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
275
Collector-base Capacitance-Max (pF)
250
Transition Frequency-Nom (fT) (MHz)
20
Screening Level / Reference Standard
MIL-19500