INFINEON TECHNOLOGIES AG SPN04N60S5HUSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SPN04N60S5HUSA1

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 0.8A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-261AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
0.8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Pulsed Drain Current-Max (IDM) (A)
3
Drain-source On Resistance-Max (ohm)
0.95