INFINEON TECHNOLOGIES AG SPN01N60S5 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SPN01N60S5

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 0.3A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Additional Feature
HIGH VOLTAGE
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.3 A
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.8 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
20 mJ
Drain-source On Resistance-Max
6 ohm
Pulsed Drain Current-Max (IDM)
1.6 A