SPI80N06S2-07
INFINEON TECHNOLOGIES AG
- 生命周期状态EOL
- 说明MOSFET N-CH 55V 80A TO262-3
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-262AA
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)250
- Drain Current-Max (ID) (A)80
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)55
- Operating Temperature-Max (Cel)175
- Avalanche Energy Rating (Eas) (mJ)530
- Pulsed Drain Current-Max (IDM) (A)320
- Drain-source On Resistance-Max (ohm)0.0066
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SPI80N06S2-07