INFINEON TECHNOLOGIES AG SPI08N80C3XK | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SPI08N80C3XK

生命周期状态
Active-Unconfirmed
说明
Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED, HIGH VOLTAGE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
8 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
340 mJ
Drain-source On Resistance-Max
0.65 ohm
Pulsed Drain Current-Max (IDM)
24 A