RF MICRO DEVICES INC SPF-2000 | 搜芯易Sourcengine

RF MICRO DEVICES INC SPF-2000

生命周期状态
Discontinued
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
R-XUUC-N6
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
UPPER
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.14 A
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
5.5 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
0.6 W