INFINEON TECHNOLOGIES AG SPD02N60S5BTMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SPD02N60S5BTMA1

生命周期状态
EOL
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
1.8
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
50
Pulsed Drain Current-Max (IDM) (A)
3.2
Drain-source On Resistance-Max (ohm)
3