INFINEON TECHNOLOGIES AG SPBX1N60S5 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SPBX1N60S5

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
20.7 A
DS Breakdown Voltage-Min
600 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
690 mJ
Drain-source On Resistance-Max
0.19 ohm
Pulsed Drain Current-Max (IDM)
42 A