INFINEON TECHNOLOGIES AG SPB11N60S5 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SPB11N60S5

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS S5
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
11
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
340
Pulsed Drain Current-Max (IDM) (A)
22
Drain-source On Resistance-Max (ohm)
0.38