INFINEON TECHNOLOGIES AG SP001067888 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SP001067888

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Reference Standard
AEC-Q101
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
80 A
Feedback Cap-Max (Crss)
190 pF
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
215 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
450 mJ
Drain-source On Resistance-Max
0.008 ohm
Pulsed Drain Current-Max (IDM)
320 A