SP000909912
INFINEON TECHNOLOGIES AG
- 生命周期状态Active
- 说明Insulated Gate Bipolar Transistor, 600V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)1.9
- Polarity/Channel TypeN-Channel
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)20
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)600
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SP000909912