INFINEON TECHNOLOGIES AG SP000843678 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SP000843678

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X35
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
1.95
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
35
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
600
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
180
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
400
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
650
Screening Level / Reference Standard
IEC-61140; UL RECOGNIZED