INFINEON TECHNOLOGIES AG SP000714312 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SP000714312

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Reference Standard
IEC-61249-2-21
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
34 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
4 pF
DS Breakdown Voltage-Min
200 V
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
136 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
190 mJ
Drain-source On Resistance-Max
0.032 ohm
Pulsed Drain Current-Max (IDM)
136 A