INFINEON TECHNOLOGIES AG SP000614736 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG SP000614736

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 1390A I(C), 1700V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X12
Configuration
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.45
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
12
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
6250
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
650
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
1290
Collector Current-Max (IC) (A)
1390
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.4
Collector-emitter Voltage-Max (V)
1700
Screening Level / Reference Standard
IEC-61140