SP000101744
INFINEON TECHNOLOGIES AG
- 生命周期状态Active
- 说明Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X19
- ConfigurationSINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.75
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals19
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)500
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)70
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)1200
- Screening Level / Reference StandardUL RECOGNIZED
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SP000101744