ONSEMI SNXH150B120H3Q2F2PG-N | 搜芯易Sourcengine

ONSEMI SNXH150B120H3Q2F2PG-N

生命周期状态
Active
RoHS
符合RoHS标准
说明
SNXH150B1 - GEN III Q2BOOST 1100V
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X35
Configuration
SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e3
VCEsat-Max (V)
2.5
Case Connection
ISOLATED
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Position
UPPER
Number of Elements
3
Number of Terminals
35
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
279
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
68
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
410
Collector Current-Max (IC) (A)
80
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200