SNXH100M95H3Q2F2PG
ONSEMI
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 263A I(C), 950V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X40
- ConfigurationSERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- J-STD-609 Codee3
- VCEsat-Max (V)2.25
- Case ConnectionISOLATED
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionUPPER
- Fall Time-Max (ns)264
- Number of Elements6
- Number of Terminals40
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)77
- Power Dissipation-Max (W)457
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)306
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Nom (toff) (ns)1665
- Collector Current-Max (IC) (A)263
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)5.7
- Collector-emitter Voltage-Max (V)950
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SNXH100M95H3Q2F2PG