SNXH100M65L3Q2F2PG
ONSEMI
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Insulated Gate Bipolar Transistor, 263A I(C), 650V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X40
- ConfigurationSERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- J-STD-609 Codee3
- VCEsat-Max (V)2.2
- Case ConnectionISOLATED
- Terminal FinishMATTE TIN
- Terminal PositionUPPER
- Number of Elements8
- Number of Terminals40
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)339
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)357
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)3780
- Collector Current-Max (IC) (A)263
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)650
SNXH100M65L3Q2F2PG有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
SNXH100M65L3Q2F2PG