SILICON TRANSISTOR CORP SNGD20620 | 搜芯易Sourcengine

SILICON TRANSISTOR CORP SNGD20620

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-254AA
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
S-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
VCEsat-Max (V)
2.6
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
20
Collector-emitter Voltage-Max (V)
600
Power Dissipation Ambient-Max (W)
75