NEW ENGLAND SEMICONDUCTOR SNG40635 | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR SNG40635

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-258AA
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-MSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-258AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
35
Collector-emitter Voltage-Max (V)
600