SILICON TRANSISTOR CORP SNG30610 | 搜芯易Sourcengine

SILICON TRANSISTOR CORP SNG30610

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-257
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-MSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-257
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Collector Current-Max (IC)
10 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V