SILICON TRANSISTOR CORP SND410 | 搜芯易Sourcengine

SILICON TRANSISTOR CORP SND410

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 20A I(D), 400V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-MSFM-T6
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
2
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
20 A
DS Breakdown Voltage-Min
400 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
125 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.2 ohm