Rochester Electronics, LLC SN54AS870JT | 搜芯易Sourcengine

Rochester Electronics, LLC SN54AS870JT

生命周期状态
Active
说明
Multi-Port SRAM, 16X4, 20ns, TTL, CDIP24
类别
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
3A001.a.2.c
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
TTL
JESD-30 Code
R-CDIP-T24
Memory Width
4
Package Code
DIP
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Temperature Grade
MILITARY
Terminal Position
DUAL
Additional Feature
DUAL MEMORY FOR MULTIBUS ARCHITECTURE
Memory Organization
16X4
Number of Functions
1
Number of Terminals
24
Access Time-Max (ns)
20
Number of Words Code
16
Memory Density (bits)
64
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
16
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-55