SMUN5330DW1T1G
ONSEMI
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明TRANS NPN/PNP PREBIAS SOT363
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G6
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionDUAL
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1.0
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN AND PNP
- DC Current Gain-Min (hFE)3
- Power Dissipation-Max (W)0.256
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)0.1
- Collector-emitter Voltage-Max (V)50
- Screening Level / Reference StandardAEC-Q101
- Time@Peak Reflow Temperature-Max (s)30
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SMUN5330DW1T1G