ONSEMI SMMBFJ310LT3 | 搜芯易Sourcengine

ONSEMI SMMBFJ310LT3

生命周期状态
Active
说明
RF N-CHANNEL, JUNCTION FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236AB
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
2.5 pF
DS Breakdown Voltage-Min
25 V
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
235
Time@Peak Reflow Temperature-Max (s)
30