TT ELECTRONICS PLC SML80H12 | 搜芯易Sourcengine

TT ELECTRONICS PLC SML80H12

生命周期状态
NRFND
REACH
REACH compliant
说明
Power Field-Effect Transistor, 11.5A I(D), 800V, 0.67ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-258AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
11.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
1210 mJ
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Drain-source On Resistance-Max
0.67 ohm
Pulsed Drain Current-Max (IDM)
46 A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED