TT ELECTRONICS PLC SML80A12R1 | 搜芯易Sourcengine

TT ELECTRONICS PLC SML80A12R1

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 11.5A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBFM-P2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-3
JESD-609 Code
e1
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
11.5 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
1210 mJ
Drain-source On Resistance-Max
0.65 ohm
Pulsed Drain Current-Max (IDM)
46 A