SML120J15R3
TT ELECTRONICS PLC
- 生命周期状态Active-Unconfirmed
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 15A I(D), 1200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PUFM-D4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)15 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min1200 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)2500 mJ
- Drain-source On Resistance-Max0.8 ohm
- Pulsed Drain Current-Max (IDM)60 A
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SML120J15R3