SMBH1G100US60
FAIRCHILD SEMICONDUCTOR CORP
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationMOTOR CONTROL
- JESD-30 CodeR-PUFM-X7
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.7
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- Number of Elements1
- Number of Terminals7
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)400
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)430
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)345
- Collector Current-Max (IC) (A)100
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)600
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SMBH1G100US60