TEMIC SEMICONDUCTORS SMB60N03-10L | 搜芯易Sourcengine

TEMIC SEMICONDUCTORS SMB60N03-10L

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 60A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
60
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
80
DS Breakdown Voltage-Min (V)
30
Turn-off Time-Max (toff) (ns)
180
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
125
Avalanche Energy Rating (Eas) (mJ)
180
Pulsed Drain Current-Max (IDM) (A)
240
Drain-source On Resistance-Max (ohm)
0.015