POLYFET R F DEVICES SM704 | 搜芯易Sourcengine

POLYFET R F DEVICES SM704

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRFM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
RADIAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
11.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED